HJT電(dian)池所有制程的(de)(de)(de)(de)加(jia)工溫(wen)(wen)(wen)度均低(di)于250，避免了生產(chan)(chan)效率低(di)而成(cheng)(cheng)本高(gao)(gao)的(de)(de)(de)(de)高(gao)(gao)溫(wen)(wen)(wen)擴散制結的(de)(de)(de)(de)過程，而且低(di)溫(wen)(wen)(wen)工藝(yi)(yi)使(shi)得(de)a-Si薄膜的(de)(de)(de)(de)光學帶隙(xi)、沉(chen)積速(su)率、吸收系數(shu)以(yi)及氫含量(liang)得(de)到較(jiao)精確的(de)(de)(de)(de)控制，也可避免因高(gao)(gao)溫(wen)(wen)(wen)導致的(de)(de)(de)(de)熱應力等不良影(ying)響。釜川（無(wu)錫）智能科(ke)技有限(xian)公司，以(yi)半導體生產(chan)(chan)設(she)(she)備(bei)(bei)(bei)、太陽能電(dian)池生產(chan)(chan)設(she)(she)備(bei)(bei)(bei)為(wei)主要(yao)產(chan)(chan)品(pin)，打造光伏設(she)(she)備(bei)(bei)(bei)一體化服務(wu)。擁(yong)有強(qiang)大的(de)(de)(de)(de)科(ke)研團(tuan)隊，憑借技術競爭力，在清洗(xi)制絨(rong)設(she)(she)備(bei)(bei)(bei)、PECVD設(she)(she)備(bei)(bei)(bei)、PVD設(she)(she)備(bei)(bei)(bei)、電(dian)鍍銅設(she)(she)備(bei)(bei)(bei)等方面都(dou)有獨特優勢；以(yi)高(gao)(gao)效加(jia)工制造、快速(su)終端交付的(de)(de)(de)(de)能力，為(wei)客戶提(ti)供整線工藝(yi)(yi)設(she)(she)備(bei)(bei)(bei)的(de)(de)(de)(de)交付服務(wu)。HJT電(dian)池的(de)(de)(de)(de)制造過程采用先進的(de)(de)(de)(de)工藝(yi)(yi)和設(she)(she)備(bei)(bei)(bei)，可以(yi)實現高(gao)(gao)度自動化的(de)(de)(de)(de)生產(chan)(chan)，提(ti)高(gao)(gao)生產(chan)(chan)效率并降(jiang)低(di)成(cheng)(cheng)本。成(cheng)(cheng)都(dou)零界高(gao)(gao)效HJT制絨(rong)設(she)(she)備(bei)(bei)(bei)

HJT電(dian)(dian)(dian)池生產設備，異質(zhi)結(jie)電(dian)(dian)(dian)池整(zheng)線解決方(fang)案，制(zhi)絨清洗的(de)(de)(de)主(zhu)要目的(de)(de)(de)。1去除硅(gui)片(pian)表面(mian)(mian)(mian)的(de)(de)(de)污染(ran)和(he)損(sun)傷層；2利(li)用KOH腐蝕(shi)(shi)液(ye)對n型硅(gui)片(pian)進行各項異性(xing)(xing)腐蝕(shi)(shi)，將(jiang)Si（100）晶(jing)面(mian)(mian)(mian)腐蝕(shi)(shi)為Si（111）晶(jing)面(mian)(mian)(mian)的(de)(de)(de)四方(fang)椎體結(jie)構(gou)（“金字(zi)塔(ta)結(jie)構(gou)”），即(ji)在硅(gui)片(pian)表面(mian)(mian)(mian)形成(cheng)(cheng)絨面(mian)(mian)(mian)，可將(jiang)硅(gui)片(pian)表面(mian)(mian)(mian)反射率降低(di)至12.5%以下，從而產生更多的(de)(de)(de)光生載流(liu)子(zi)(zi)；3形成(cheng)(cheng)潔凈(jing)硅(gui)片(pian)表面(mian)(mian)(mian)，由于HJT電(dian)(dian)(dian)池中(zhong)硅(gui)片(pian)襯底表面(mian)(mian)(mian)直接為異質(zhi)結(jie)界面(mian)(mian)(mian)的(de)(de)(de)一部分(fen)，避免不潔凈(jing)引(yin)進的(de)(de)(de)缺陷和(he)雜質(zhi)而帶來的(de)(de)(de)結(jie)界面(mian)(mian)(mian)處載流(liu)子(zi)(zi)的(de)(de)(de)復合。安徽雙面(mian)(mian)(mian)微(wei)晶(jing)HJT設備HJT電(dian)(dian)(dian)池以其出色的(de)(de)(de)發電(dian)(dian)(dian)性(xing)(xing)能、技術延展(zhan)性(xing)(xing)和(he)低(di)碳制(zhi)造過程，脫穎而出成(cheng)(cheng)為主(zhu)流(liu)技術之一。

HJT太陽能電(dian)(dian)池使用晶(jing)(jing)體硅片進(jin)行載流(liu)子傳輸和吸(xi)收，并使用非晶(jing)(jing)/或(huo)微(wei)晶(jing)(jing)薄硅層進(jin)行鈍化和結的(de)(de)形(xing)成。頂部電(dian)(dian)極由(you)透明導電(dian)(dian)氧化物（TCO）層和金屬網格組成。異質結硅太陽能電(dian)(dian)池已經(jing)吸(xi)引了(le)很多(duo)人(ren)的(de)(de)注意，因為它們可(ke)以(yi)達到很高的(de)(de)轉(zhuan)換效率(lv)，可(ke)達26.3%，相(xiang)關團(tuan)隊對HJT極限效率(lv)進(jin)行更新為28.5%，同時使用低溫度(du)(du)加(jia)(jia)工，通常整個(ge)過程低于(yu)200℃。低加(jia)(jia)工溫度(du)(du)允許處理(li)厚度(du)(du)小(xiao)于(yu)100微(wei)米的(de)(de)硅晶(jing)(jing)圓，同時保持高產(chan)量。異質結電(dian)(dian)池轉(zhuan)換效率(lv)高，拓展潛力(li)(li)大(da)，工藝簡單并且降(jiang)本路(lu)線清晰，契合(he)了(le)光伏(fu)產(chan)業發(fa)展的(de)(de)規律，是有潛力(li)(li)的(de)(de)下一(yi)代電(dian)(dian)池技術。

HJT電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)是一(yi)種新型的(de)(de)(de)(de)(de)太(tai)(tai)(tai)陽(yang)(yang)能(neng)(neng)(neng)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)，具有(you)(you)高(gao)效率(lv)、高(gao)穩(wen)定性(xing)、低(di)成本(ben)等優(you)點，因此(ci)(ci)在(zai)(zai)可(ke)(ke)持(chi)(chi)(chi)續(xu)能(neng)(neng)(neng)源(yuan)領域(yu)具有(you)(you)廣闊(kuo)的(de)(de)(de)(de)(de)應(ying)用(yong)(yong)前(qian)景。首先，HJT電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)(de)(de)(de)(de)高(gao)效率(lv)使其(qi)能(neng)(neng)(neng)夠(gou)更(geng)好地(di)(di)利用(yong)(yong)太(tai)(tai)(tai)陽(yang)(yang)能(neng)(neng)(neng)資源(yuan)，提高(gao)太(tai)(tai)(tai)陽(yang)(yang)能(neng)(neng)(neng)電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)(de)(de)(de)(de)發(fa)電(dian)(dian)(dian)(dian)效率(lv)，從(cong)而降低(di)太(tai)(tai)(tai)陽(yang)(yang)能(neng)(neng)(neng)發(fa)電(dian)(dian)(dian)(dian)的(de)(de)(de)(de)(de)成本(ben)，提高(gao)可(ke)(ke)持(chi)(chi)(chi)續(xu)能(neng)(neng)(neng)源(yuan)的(de)(de)(de)(de)(de)競爭力(li)。其(qi)次，HJT電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)具有(you)(you)高(gao)穩(wen)定性(xing)，能(neng)(neng)(neng)夠(gou)在(zai)(zai)不同(tong)的(de)(de)(de)(de)(de)環境條件下保持(chi)(chi)(chi)較高(gao)的(de)(de)(de)(de)(de)發(fa)電(dian)(dian)(dian)(dian)效率(lv)，這(zhe)使得(de)它(ta)在(zai)(zai)實際應(ying)用(yong)(yong)中(zhong)更(geng)加可(ke)(ke)靠，能(neng)(neng)(neng)夠(gou)更(geng)好地(di)(di)滿足人們對可(ke)(ke)持(chi)(chi)(chi)續(xu)能(neng)(neng)(neng)源(yuan)的(de)(de)(de)(de)(de)需求。除(chu)此(ci)(ci)之外(wai)，HJT電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)(de)(de)(de)(de)低(di)成本(ben)使得(de)它(ta)在(zai)(zai)大規模(mo)應(ying)用(yong)(yong)中(zhong)更(geng)具有(you)(you)優(you)勢，能(neng)(neng)(neng)夠(gou)更(geng)好地(di)(di)推動可(ke)(ke)持(chi)(chi)(chi)續(xu)能(neng)(neng)(neng)源(yuan)的(de)(de)(de)(de)(de)發(fa)展，促進全球能(neng)(neng)(neng)源(yuan)轉(zhuan)型。綜上所述(shu)，HJT電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)在(zai)(zai)可(ke)(ke)持(chi)(chi)(chi)續(xu)能(neng)(neng)(neng)源(yuan)領域(yu)具有(you)(you)廣闊(kuo)的(de)(de)(de)(de)(de)應(ying)用(yong)(yong)前(qian)景，將成為(wei)未(wei)來可(ke)(ke)持(chi)(chi)(chi)續(xu)能(neng)(neng)(neng)源(yuan)發(fa)展的(de)(de)(de)(de)(de)重要組成部分。光伏(fu)HJT電(dian)(dian)(dian)(dian)池(chi)(chi)(chi)的(de)(de)(de)(de)(de)高(gao)效性(xing)和穩(wen)定性(xing)使其(qi)成為(wei)太(tai)(tai)(tai)陽(yang)(yang)能(neng)(neng)(neng)發(fa)電(dian)(dian)(dian)(dian)的(de)(de)(de)(de)(de)可(ke)(ke)靠選(xuan)擇。

HJT電池(chi)(chi)(chi)的(de)(de)(de)(de)(de)(de)(de)(de)長期(qi)性(xing)(xing)(xing)能(neng)表現良好。HJT電池(chi)(chi)(chi)采用(yong)(yong)(yong)了高(gao)效(xiao)(xiao)的(de)(de)(de)(de)(de)(de)(de)(de)HJT技術，其具有(you)(you)(you)高(gao)轉換效(xiao)(xiao)率、低(di)溫系數、高(gao)穩定性(xing)(xing)(xing)等優點(dian)。這些(xie)特點(dian)使得HJT電池(chi)(chi)(chi)在(zai)長期(qi)使用(yong)(yong)(yong)過(guo)程中(zhong)能(neng)夠(gou)(gou)保(bao)(bao)持(chi)(chi)較高(gao)的(de)(de)(de)(de)(de)(de)(de)(de)能(neng)量(liang)(liang)轉換效(xiao)(xiao)率，同時也能(neng)夠(gou)(gou)保(bao)(bao)持(chi)(chi)較低(di)的(de)(de)(de)(de)(de)(de)(de)(de)能(neng)量(liang)(liang)損失率。此(ci)外，HJT電池(chi)(chi)(chi)還(huan)具有(you)(you)(you)較長的(de)(de)(de)(de)(de)(de)(de)(de)使用(yong)(yong)(yong)壽命，能(neng)夠(gou)(gou)在(zai)高(gao)溫、低(di)溫等惡劣環(huan)境(jing)下(xia)正常工作，因此(ci)在(zai)實際應(ying)用(yong)(yong)(yong)中(zhong)具有(you)(you)(you)很(hen)高(gao)的(de)(de)(de)(de)(de)(de)(de)(de)可靠性(xing)(xing)(xing)。HJT電池(chi)(chi)(chi)的(de)(de)(de)(de)(de)(de)(de)(de)長期(qi)性(xing)(xing)(xing)能(neng)還(huan)受(shou)到(dao)其制(zhi)造工藝(yi)和(he)材料(liao)的(de)(de)(de)(de)(de)(de)(de)(de)影(ying)響。HJT電池(chi)(chi)(chi)采用(yong)(yong)(yong)了高(gao)質量(liang)(liang)的(de)(de)(de)(de)(de)(de)(de)(de)硅材料(liao)和(he)優化的(de)(de)(de)(de)(de)(de)(de)(de)制(zhi)造工藝(yi)，能(neng)夠(gou)(gou)保(bao)(bao)證電池(chi)(chi)(chi)的(de)(de)(de)(de)(de)(de)(de)(de)穩定性(xing)(xing)(xing)和(he)可靠性(xing)(xing)(xing)。此(ci)外，HJT電池(chi)(chi)(chi)還(huan)具有(you)(you)(you)較低(di)的(de)(de)(de)(de)(de)(de)(de)(de)光(guang)衰(shuai)減率，能(neng)夠(gou)(gou)在(zai)長期(qi)使用(yong)(yong)(yong)過(guo)程中(zhong)保(bao)(bao)持(chi)(chi)較高(gao)的(de)(de)(de)(de)(de)(de)(de)(de)光(guang)電轉換效(xiao)(xiao)率。總之，HJT電池(chi)(chi)(chi)的(de)(de)(de)(de)(de)(de)(de)(de)長期(qi)性(xing)(xing)(xing)能(neng)表現良好，具有(you)(you)(you)高(gao)效(xiao)(xiao)、穩定、可靠等優點(dian)，能(neng)夠(gou)(gou)滿足各種應(ying)用(yong)(yong)(yong)場景(jing)的(de)(de)(de)(de)(de)(de)(de)(de)需求。HJT電池(chi)(chi)(chi)采用(yong)(yong)(yong)N型(xing)晶體硅作為基底(di)，具有(you)(you)(you)更高(gao)的(de)(de)(de)(de)(de)(de)(de)(de)少(shao)子(zi)壽命和(he)更低(di)的(de)(de)(de)(de)(de)(de)(de)(de)光(guang)衰(shuai)減。深(shen)圳專業(ye)HJT設備廠(chang)家

隨著HJT技(ji)術(shu)的進一步成(cheng)熟，設備國(guo)產化推(tui)進，投資成(cheng)本(ben)繼(ji)續降低，使(shi)HJT技(ji)術(shu)將(jiang)更具有競爭(zheng)力(li)。成(cheng)都(dou)零界(jie)高效HJT制絨設備

HJT電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)是(shi)一(yi)(yi)種(zhong)新型的(de)(de)太(tai)(tai)陽(yang)能(neng)(neng)(neng)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)，全稱為“高(gao)效結(jie)(jie)晶硅薄膜(mo)太(tai)(tai)陽(yang)能(neng)(neng)(neng)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)”。HJT電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)采用了(le)一(yi)(yi)種(zhong)新的(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)結(jie)(jie)構(gou)，將硅薄膜(mo)太(tai)(tai)陽(yang)能(neng)(neng)(neng)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)和(he)異質結(jie)(jie)太(tai)(tai)陽(yang)能(neng)(neng)(neng)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)結(jie)(jie)合(he)在(zai)(zai)一(yi)(yi)起，能(neng)(neng)(neng)夠同(tong)(tong)時利用兩種(zhong)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)的(de)(de)優點(dian)，具有高(gao)效率、高(gao)穩(wen)定(ding)(ding)性、高(gao)可(ke)靠(kao)性等(deng)特點(dian)。HJT電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)的(de)(de)主要技(ji)術是(shi)異質結(jie)(jie)技(ji)術，即在(zai)(zai)硅薄膜(mo)太(tai)(tai)陽(yang)能(neng)(neng)(neng)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)的(de)(de)兩側分別加上(shang)一(yi)(yi)層p型和(he)n型的(de)(de)硅薄膜(mo)，形成(cheng)一(yi)(yi)個p-i-n結(jie)(jie)構(gou)，這種(zhong)結(jie)(jie)構(gou)可(ke)以(yi)有效地減少電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)的(de)(de)反(fan)向漏電(dian)(dian)(dian)(dian)(dian)(dian)流(liu)，提高(gao)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)的(de)(de)效率和(he)穩(wen)定(ding)(ding)性。同(tong)(tong)時，HJT電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)還采用了(le)雙面電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)結(jie)(jie)構(gou)，可(ke)以(yi)同(tong)(tong)時吸收(shou)正反(fan)兩面的(de)(de)光(guang)能(neng)(neng)(neng)，提高(gao)了(le)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)的(de)(de)光(guang)電(dian)(dian)(dian)(dian)(dian)(dian)轉換效率。HJT電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)的(de)(de)優點(dian)在(zai)(zai)于(yu)高(gao)效率、高(gao)穩(wen)定(ding)(ding)性、高(gao)可(ke)靠(kao)性、長壽命等(deng)，可(ke)以(yi)應(ying)用于(yu)各種(zhong)太(tai)(tai)陽(yang)能(neng)(neng)(neng)電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)系(xi)統(tong)，包(bao)括家庭(ting)光(guang)伏(fu)(fu)發(fa)電(dian)(dian)(dian)(dian)(dian)(dian)系(xi)統(tong)、商業(ye)光(guang)伏(fu)(fu)發(fa)電(dian)(dian)(dian)(dian)(dian)(dian)系(xi)統(tong)、工業(ye)光(guang)伏(fu)(fu)發(fa)電(dian)(dian)(dian)(dian)(dian)(dian)系(xi)統(tong)等(deng)。HJT電(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)的(de)(de)推廣和(he)應(ying)用將有助于(yu)推動(dong)太(tai)(tai)陽(yang)能(neng)(neng)(neng)產業(ye)的(de)(de)發(fa)展，促進可(ke)再生能(neng)(neng)(neng)源的(de)(de)普及和(he)應(ying)用。成(cheng)都零界高(gao)效HJT制絨設備

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